STP45N60DM6 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-220 packag
| Anzahl | Privatkunde |
|---|---|
| 1+ | 14.03 EUR |
| 10+ | 8.69 EUR |
| 100+ | 7.54 EUR |
| 500+ | 6.7 EUR |
| 1000+ | 5.99 EUR |
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Technische Details STP45N60DM6 STMicroelectronics
Description: MOSFET N-CH 600V 30A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 99mOhm @ 15A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V.
Weitere Produktangebote STP45N60DM6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STP45N60DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Power dissipation: 210W Case: TO220-3 On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 95A Gate charge: 44nC |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STP45N60DM6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Power dissipation: 210W
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 44nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 95A; 210W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Power dissipation: 210W
Case: TO220-3
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 95A
Gate charge: 44nC
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)