STP45N65M5 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 78mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 9.75 EUR |
10+ | 7.55 EUR |
11+ | 7.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP45N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 35A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 19.5A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 100 V.
Weitere Produktangebote STP45N65M5 nach Preis ab 5.22 EUR bis 19.01 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STP45N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 22A; 210W; TO220-3 Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 210W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 78mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 85 Stücke: Lieferzeit 7-14 Tag (e) |
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STP45N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1223 Stücke: Lieferzeit 14-21 Tag (e) |
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STP45N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1222 Stücke: Lieferzeit 14-21 Tag (e) |
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STP45N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 35A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 19.5A, 10V Power Dissipation (Max): 210W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 100 V |
auf Bestellung 855 Stücke: Lieferzeit 21-28 Tag (e) |
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STP45N65M5 | Hersteller : STMicroelectronics | MOSFET N-Ch 650V 0.067 Ohm 35A MDmesh M5 MOS |
auf Bestellung 1994 Stücke: Lieferzeit 112-126 Tag (e) |
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STP45N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1223 Stücke: Lieferzeit 14-21 Tag (e) |
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STP45N65M5 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STP45N65M5 - Leistungs-MOSFET, n-Kanal, 650 V, 35 A, 0.067 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 210W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.067ohm |
auf Bestellung 7502 Stücke: Lieferzeit 14-21 Tag (e) |
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STP45N65M5 Produktcode: 144919 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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STP45N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP45N65M5 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |