STP4N90K5 STMicroelectronics
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.89 EUR |
| 25+ | 2.85 EUR |
| 100+ | 2.27 EUR |
| 500+ | 1.72 EUR |
| 1000+ | 1.56 EUR |
| 2000+ | 1.50 EUR |
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Technische Details STP4N90K5 STMicroelectronics
Description: MOSFET N-CH 900V 3A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 173 pF @ 100 V.
Weitere Produktangebote STP4N90K5
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STP4N90K5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP4N90K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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| STP4N90K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 1.9A; Idm: 12A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A Power dissipation: 60W Gate charge: 5.3nC Technology: MDmesh™ K5 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP4N90K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 3A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 173 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STP4N90K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 900V; 1.9A; Idm: 12A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.9A Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A Power dissipation: 60W Gate charge: 5.3nC Technology: MDmesh™ K5 |
Produkt ist nicht verfügbar |