STP50N65DM6 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a TO-220 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.46 EUR |
| 10+ | 10.86 EUR |
| 100+ | 8.82 EUR |
| 500+ | 7.83 EUR |
| 1000+ | 7.02 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP50N65DM6 STMicroelectronics
Description: MOSFET N-CH 650V 33A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V.
Weitere Produktangebote STP50N65DM6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STP50N65DM6 | STMicroelectronics |
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
STP50N65DM6 | STMicroelectronics |
Description: MOSFET N-CH 650V 33A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
STP50N65DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3 Type of transistor: N-MOSFET Power dissipation: 250W Case: TO220-3 Mounting: THT Gate charge: 52.5nC Kind of package: tube Polarisation: unipolar Kind of channel: enhancement On-state resistance: 91mΩ Gate-source voltage: ±25V Drain current: 33A Pulsed drain current: 120A Drain-source voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STP50N65DM6 |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STP50N65DM6 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 33A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Description: MOSFET N-CH 650V 33A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STP50N65DM6 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO220-3
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 91mΩ
Gate-source voltage: ±25V
Drain current: 33A
Pulsed drain current: 120A
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 250W
Case: TO220-3
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 91mΩ
Gate-source voltage: ±25V
Drain current: 33A
Pulsed drain current: 120A
Drain-source voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH