STP50N65DM6 STMicroelectronics
auf Bestellung 950 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 17.84 EUR |
| 10+ | 15.31 EUR |
| 25+ | 13.88 EUR |
| 100+ | 12.77 EUR |
| 250+ | 12.01 EUR |
| 500+ | 11.26 EUR |
| 1000+ | 10.11 EUR |
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Technische Details STP50N65DM6 STMicroelectronics
Description: MOSFET N-CH 650V 33A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V.
Weitere Produktangebote STP50N65DM6
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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STP50N65DM6 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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STP50N65DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 120A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 91mΩ Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STP50N65DM6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 33A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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STP50N65DM6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 33A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 91mOhm @ 16.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 52.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V |
Produkt ist nicht verfügbar |
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STP50N65DM6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; Idm: 120A; 250W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 120A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 91mΩ Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |