Technische Details STP5N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 4.2A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc), Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.1A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V.
Weitere Produktangebote STP5N62K3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STP5N62K3 | STMicroelectronics |
 Description: MOSFET N-CH 620V 4.2A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.1A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
STP5N62K3 | STMicroelectronics |
MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STP5N62K3 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 4.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.1A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V
Description: MOSFET N-CH 620V 4.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.1A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STP5N62K3 |
|
Hersteller: STMicroelectronics
MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A
MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH