STP5NB60
auf Bestellung 299 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 1.13 EUR |
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Technische Details STP5NB60 ST
Description: MOSFET N-CH 600V 5A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 25 V.
Weitere Produktangebote STP5NB60
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STP5NB60 Produktcode: 23830 |
Hersteller : ST |
 Transistoren > MOSFET N-CHGehäuse: TO-220 Uds,V: 600 Idd,A: 5 Rds(on), Ohm: 01.08.2015 JHGF: THT ZCODE: 8541290010 |
Produkt ist nicht verfügbar
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STP5NB60 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 25 V |
Produkt ist nicht verfügbar |
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STP5NB60 | Hersteller : STMicroelectronics |
MOSFET |
Produkt ist nicht verfügbar |