STP5NK52ZD STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 520V 4.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 520 V
Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V
auf Bestellung 1316 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.38 EUR |
| 50+ | 1.52 EUR |
| 100+ | 1.46 EUR |
| 1000+ | 1.42 EUR |
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Technische Details STP5NK52ZD STMicroelectronics
Description: MOSFET N-CH 520V 4.4A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-220, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 520 V, Gate Charge (Qg) (Max) @ Vgs: 16.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 25 V.
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