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STP60N043DM9

STP60N043DM9 STMicroelectronics

stp60n043dm9.pdf
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET
auf Bestellung 926 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.46 EUR
10+9.77 EUR
100+9.03 EUR
500+8.8 EUR
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Technische Details STP60N043DM9 STMicroelectronics

Description: N-CHANNEL 600 V, 38 MOHM TYP., 5, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 28A, 10V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V.

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STP60N043DM9 STP60N043DM9 Hersteller : STMicroelectronics stp60n043dm9.pdf Description: N-CHANNEL 600 V, 38 MOHM TYP., 5
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 28A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.46 EUR
50+9.77 EUR
100+9.03 EUR
500+7.73 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
STP60N043DM9 Hersteller : STMicroelectronics stp60n043dm9.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
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