STP60N043DM9 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.78 EUR |
| 10+ | 11.63 EUR |
| 100+ | 10.75 EUR |
| 500+ | 10.45 EUR |
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Technische Details STP60N043DM9 STMicroelectronics
Description: N-CHANNEL 600 V, 38 MOHM TYP., 5, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 28A, 10V, Power Dissipation (Max): 245W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V.
Weitere Produktangebote STP60N043DM9 nach Preis ab 9.2 EUR bis 20.78 EUR
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STP60N043DM9 | STMicroelectronics |
 Description: N-CHANNEL 600 V, 38 MOHM TYP., 5Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 28A, 10V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V |
auf Bestellung 976 Stücke: Lieferzeit 10-14 Tag (e) |
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| STP60N043DM9 |
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Hersteller: STMicroelectronics
Description: N-CHANNEL 600 V, 38 MOHM TYP., 5
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 28A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V
Description: N-CHANNEL 600 V, 38 MOHM TYP., 5
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 28A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 78.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4675 pF @ 400 V
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.78 EUR |
| 50+ | 11.63 EUR |
| 100+ | 10.75 EUR |
| 500+ | 9.2 EUR |