STP65N045M9 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 11.44 EUR |
| 10+ | 8.11 EUR |
| 100+ | 7.96 EUR |
| 500+ | 7.2 EUR |
| 1000+ | 6.48 EUR |
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Technische Details STP65N045M9 STMicroelectronics
Description: N-CHANNEL 650 V, 39 MOHM TYP., 5, Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.2V @ 250µA, Power Dissipation (Max): 245W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STP65N045M9 nach Preis ab 7.18 EUR bis 11.63 EUR
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STP65N045M9 | Hersteller : STMicroelectronics |
 Description: N-CHANNEL 650 V, 39 MOHM TYP., 5Input Capacitance (Ciss) (Max) @ Vds: 4610 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.2V @ 250µA Power Dissipation (Max): 245W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 944 Stücke: Lieferzeit 10-14 Tag (e) |
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