STP6N52K3
Hersteller: auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details STP6N52K3
Description: MOSFET N-CH 525V 5A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 525 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V.
Weitere Produktangebote STP6N52K3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STP6N52K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 525V 5A 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STP6N52K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 525V 5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V |
Produkt ist nicht verfügbar |