| Anzahl | Preis |
|---|---|
| 1+ | 4.19 EUR |
| 10+ | 1.94 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.47 EUR |
| 1000+ | 1.35 EUR |
| 2000+ | 1.29 EUR |
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Technische Details STP6N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 5.5A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 620 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote STP6N62K3 nach Preis ab 1.77 EUR bis 1.77 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STP6N62K3 | Hersteller : ST |
 Trans MOSFET N-CH 620V 5.5A STP6N62K3 TSTP6N62K3Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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STP6N62K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 620V 5.5A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 620 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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STP6N62K3 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 3A; 30W; TO220-3 Type of transistor: N-MOSFET Technology: SuperMESH3™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 3A Power dissipation: 30W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |