STP7LN80K5 STMicroelectronics

Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 452 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 4.28 EUR |
50+ | 2.20 EUR |
100+ | 2.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STP7LN80K5 STMicroelectronics
Description: MOSFET N-CH 800V 5A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V.
Weitere Produktangebote STP7LN80K5 nach Preis ab 1.50 EUR bis 4.79 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
STP7LN80K5 | Hersteller : STMicroelectronics |
![]() |
auf Bestellung 494 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
STP7LN80K5 | Hersteller : STMicroelectronics |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||||
STP7LN80K5 | Hersteller : STMicroelectronics |
![]() |
Produkt ist nicht verfügbar |