STP80N1K1K6 STMicroelectronics
Hersteller: STMicroelectronicsDescription: Linear IC's
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 1.7A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 400 V
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 10+ | 1.89 EUR |
| 25+ | 1.71 EUR |
| 100+ | 1.52 EUR |
| 250+ | 1.43 EUR |
| 500+ | 1.38 EUR |
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Technische Details STP80N1K1K6 STMicroelectronics
Description: Linear IC's, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 1.7A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 4V @ 50µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 400 V.
Weitere Produktangebote STP80N1K1K6 nach Preis ab 1.11 EUR bis 3.73 EUR
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auf Bestellung 1068 Stücke: Lieferzeit 10-14 Tag (e) |
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 8A; 62W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Pulsed drain current: 8A Power dissipation: 62W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 5.7nC |
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