STP80N450K6 STMicroelectronics
auf Bestellung 254 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.55 EUR |
| 10+ | 3.52 EUR |
| 100+ | 3.26 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.5 EUR |
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Technische Details STP80N450K6 STMicroelectronics
Description: N-CHANNEL 800 V, 400 MOHM TYP.,, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 400 V.
Weitere Produktangebote STP80N450K6 nach Preis ab 1.99 EUR bis 7.13 EUR
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STP80N450K6 | Hersteller : STMicroelectronics |
 Description: N-CHANNEL 800 V, 400 MOHM TYP.,Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 400 V |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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STP80N450K6 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STP80N450K6 - Leistungs-MOSFET, n-Kanal, 800 V, 10 A, 0.38 ohm, TO-220, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 10A hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 100W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.38ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP80N450K6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP80N450K6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP80N450K6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP80N450K6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 18A; 100W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 18A Power dissipation: 100W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 17.3nC |
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