STP80N600K6 STMicroelectronics
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.52 EUR |
| 10+ | 2.36 EUR |
| 100+ | 2.29 EUR |
| 500+ | 1.99 EUR |
| 1000+ | 1.56 EUR |
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Technische Details STP80N600K6 STMicroelectronics
Description: N-CHANNEL 800 V, 515 MOHM TYP.,, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V, Power Dissipation (Max): 86W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V.
Weitere Produktangebote STP80N600K6 nach Preis ab 4.86 EUR bis 4.96 EUR
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STP80N600K6 | Hersteller : STMicroelectronics |
 Description: N-CHANNEL 800 V, 515 MOHM TYP.,Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| STP80N600K6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 7A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STP80N600K6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 7A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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| STP80N600K6 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 7A; Idm: 15A; 86W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7A Pulsed drain current: 15A Power dissipation: 86W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 10.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |