STP8N120K5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 1200V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V
auf Bestellung 862 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 15.24 EUR |
| 50+ | 12.18 EUR |
| 100+ | 10.9 EUR |
| 500+ | 9.62 EUR |
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Technische Details STP8N120K5 STMicroelectronics
Description: MOSFET N-CH 1200V 6A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 2.5A, 10V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 100 V.
Weitere Produktangebote STP8N120K5 nach Preis ab 8.74 EUR bis 15.37 EUR
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