STPSC10065DLF STMicroelectronics
auf Bestellung 2163 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.78 EUR |
| 10+ | 4.72 EUR |
| 100+ | 3.7 EUR |
| 500+ | 3.24 EUR |
| 1000+ | 3.04 EUR |
| 3000+ | 2.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STPSC10065DLF STMicroelectronics
Description: DIODE SIC 650V 10A POWERFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 670pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PowerFlat™ (8x8) HV, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 130 µA @ 650 V.
Weitere Produktangebote STPSC10065DLF nach Preis ab 2.85 EUR bis 6.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STPSC10065DLF | Hersteller : STMicroelectronics |
 Description: DIODE SIC 650V 10A POWERFLAT HVPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 670pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 130 µA @ 650 V |
auf Bestellung 1964 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
| STPSC10065DLF | Hersteller : STMicroelectronics |
SiC Schottky 10A - 650V - |
Produkt ist nicht verfügbar |
||||||||||||||
| STPSC10065DLF | Hersteller : STMicroelectronics |
Diode Schottky SiC 650V 10A 4-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||
| STPSC10065DLF | Hersteller : STMicroelectronics |
650 V 10 A Power Schottky Silicon Carbide Diode |
Produkt ist nicht verfügbar |
||||||||||||||
| STPSC10065DLF | Hersteller : STMicroelectronics |
Diode Schottky SiC 650V 10A 4-Pin Power Flat EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
STPSC10065DLF | Hersteller : STMicroelectronics |
Description: DIODE SIC 650V 10A POWERFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 670pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 130 µA @ 650 V |
Produkt ist nicht verfügbar |