STPSC10065DLF STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.44 EUR |
| 10+ | 5.09 EUR |
| 100+ | 3.67 EUR |
| 500+ | 3.37 EUR |
| 1000+ | 3.28 EUR |
| 3000+ | 2.87 EUR |
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Technische Details STPSC10065DLF STMicroelectronics
Description: DIODE SIC 650V 10A POWERFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 670pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PowerFlat™ (8x8) HV, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 130 µA @ 650 V.
Weitere Produktangebote STPSC10065DLF nach Preis ab 3.39 EUR bis 8.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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STPSC10065DLF | STMicroelectronics |
 Description: DIODE SIC 650V 10A POWERFLAT HVPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 670pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 130 µA @ 650 V |
auf Bestellung 1964 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STPSC10065DLF |
|
Hersteller: STMicroelectronics
Description: DIODE SIC 650V 10A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
Description: DIODE SIC 650V 10A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
auf Bestellung 1964 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.21 EUR |
| 10+ | 5.63 EUR |
| 100+ | 4.4 EUR |
| 500+ | 3.63 EUR |
| 1000+ | 3.39 EUR |