STPSC10H065B-TR STMicroelectronics
Hersteller: STMicroelectronicsDescription: DIODE SIL CARBIDE 650V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 2281 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 7.98 EUR |
| 10+ | 6.72 EUR |
| 100+ | 5.44 EUR |
| 500+ | 4.83 EUR |
| 1000+ | 4.14 EUR |
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Technische Details STPSC10H065B-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 480pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: DPAK, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Weitere Produktangebote STPSC10H065B-TR nach Preis ab 3.93 EUR bis 8.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STPSC10H065B-TR | Hersteller : STMicroelectronics |
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auf Bestellung 58 Stücke: Lieferzeit 14-28 Tag (e) |
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STPSC10H065B-TR | Hersteller : STMicroelectronics |
Diode Schottky SiC 650V 10A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STPSC10H065B-TR | Hersteller : STMicroelectronics |
Diode Schottky SiC 650V 10A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STPSC10H065B-TR | Hersteller : STMicroelectronics |
Diode Schottky SiC 650V 10A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STPSC10H065B-TR | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 22A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 470A Max. forward voltage: 2.5V Leakage current: 425µA Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STPSC10H065B-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
Produkt ist nicht verfügbar |
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| STPSC10H065B-TR | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 22A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 470A Max. forward voltage: 2.5V Leakage current: 425µA |
Produkt ist nicht verfügbar |