Produkte > STMICROELECTRONICS > STPSC10H065DLF
STPSC10H065DLF

STPSC10H065DLF STMicroelectronics

stpsc10h065dlf.pdf
Hersteller: STMicroelectronics
SiC Schottky Diodes 650 V 10 A power Schottky silicon carbide diode
auf Bestellung 2969 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.78 EUR
10+2.64 EUR
100+2.62 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details STPSC10H065DLF STMicroelectronics

Description: DIODE SIL CARB 650V 10A PWRFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 595pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PowerFlat™ (8x8) HV, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.

Weitere Produktangebote STPSC10H065DLF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
STPSC10H065DLF STPSC10H065DLF STMicroelectronics stpsc10h065dlf.pdf Description: DIODE SIL CARB 650V 10A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 595pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STPSC10H065DLF STPSC10H065DLF STMicroelectronics stpsc10h065dlf.pdf Description: DIODE SIL CARB 650V 10A PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 595pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STPSC10H065DLF stpsc10h065dlf.pdf
STPSC10H065DLF
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 10A PWRFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 595pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STPSC10H065DLF stpsc10h065dlf.pdf
STPSC10H065DLF
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 10A PWRFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 595pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH