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STPSC10H065G2-TR

STPSC10H065G2-TR STMicroelectronics

stpsc10h065g2.pdf Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
auf Bestellung 798 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.24 EUR
10+ 6.93 EUR
100+ 5.61 EUR
500+ 4.98 EUR
Mindestbestellmenge: 4
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Technische Details STPSC10H065G2-TR STMicroelectronics

Description: DIODE SIL CARBIDE 650V 10A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 480pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.

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STPSC10H065G2-TR STPSC10H065G2-TR Hersteller : STMicroelectronics stpsc10h065g2-2956166.pdf Schottky Diodes & Rectifiers 650 V, 10 A High Surge Silicon Carbide Power Schottky Diode
auf Bestellung 1952 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+8.4 EUR
10+ 7.07 EUR
100+ 5.69 EUR
250+ 5.38 EUR
500+ 5.07 EUR
1000+ 5.04 EUR
2000+ 4.08 EUR
Mindestbestellmenge: 7
STPSC10H065G2-TR STPSC10H065G2-TR Hersteller : STMicroelectronics stpsc10h065g2.pdf Diode Schottky SiC 650V 10A 3-Pin(2+Tab) D2PAK HV T/R
Produkt ist nicht verfügbar
STPSC10H065G2-TR STPSC10H065G2-TR Hersteller : STMicroelectronics stpsc10h065g2.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Produkt ist nicht verfügbar