STPSC12065G2-TR STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 650 V
auf Bestellung 768 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.27 EUR |
10+ | 5.27 EUR |
100+ | 4.26 EUR |
500+ | 3.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STPSC12065G2-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 12A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 750pF @ 0V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A, Current - Reverse Leakage @ Vr: 150 µA @ 650 V.
Weitere Produktangebote STPSC12065G2-TR nach Preis ab 4.65 EUR bis 9.62 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STPSC12065G2-TR | Hersteller : STMicroelectronics | Schottky Diodes & Rectifiers 650 V power Schottky silicon carbide diode |
auf Bestellung 566 Stücke: Lieferzeit 14-28 Tag (e) |
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STPSC12065G2-TR | Hersteller : STMicroelectronics | Diode Schottky SiC 650V 12A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STPSC12065G2-TR | Hersteller : STMicroelectronics | Diode Schottky SiC 650V 12A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STPSC12065G2-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 12A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 750pF @ 0V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A Current - Reverse Leakage @ Vr: 150 µA @ 650 V |
Produkt ist nicht verfügbar |