STPSC12065GY-TR STMicroelectronics
Hersteller: STMicroelectronics
SiC Schottky Diodes Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diode
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.72 EUR |
| 10+ | 5.63 EUR |
| 100+ | 4.19 EUR |
| 500+ | 3.89 EUR |
| 1000+ | 3.52 EUR |
| 2000+ | 3.08 EUR |
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Technische Details STPSC12065GY-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 12A D2PAK, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: D2PAK, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 750pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote STPSC12065GY-TR nach Preis ab 3.9 EUR bis 9.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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STPSC12065GY-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 12A D2PAK Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io): 12A Capacitance @ Vr, F: 750pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 742 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STPSC12065GY-TR |
|
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 12A D2PAK
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: DIODE SIL CARBIDE 650V 12A D2PAK
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 742 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.37 EUR |
| 10+ | 6.3 EUR |
| 100+ | 4.71 EUR |
| 500+ | 3.9 EUR |