STPSC12065GY-TR STMicroelectronics
Hersteller: STMicroelectronicsSiC Schottky Diodes Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diode
auf Bestellung 850 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.49 EUR |
| 10+ | 4.73 EUR |
| 100+ | 3.52 EUR |
| 500+ | 3.27 EUR |
| 1000+ | 2.96 EUR |
| 2000+ | 2.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STPSC12065GY-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 12A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 750pF @ 0V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Qualification: AEC-Q101.
Weitere Produktangebote STPSC12065GY-TR nach Preis ab 3.28 EUR bis 7.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STPSC12065GY-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 12A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 750pF @ 0V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Qualification: AEC-Q101 |
auf Bestellung 742 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| STPSC12065GY-TR | Hersteller : STMicroelectronics |
Rectifier Diode Schottky SiC 650V 12A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
||||||||||||
|
STPSC12065GY-TR | Hersteller : STMicroelectronics |
Rectifier Diode Schottky SiC 650V 12A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
STPSC12065GY-TR | Hersteller : STMicroelectronics |
Rectifier Diode Schottky SiC 650V 12A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
|
STPSC12065GY-TR | Hersteller : STMicroelectronics |
Rectifier Diode Schottky SiC 650V 12A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
STPSC12065GY-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 12A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 750pF @ 0V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |

