STPSC12065GY-TR STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARBIDE 650V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1094 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.35 EUR |
10+ | 5.34 EUR |
100+ | 4.32 EUR |
500+ | 3.84 EUR |
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Produktbewertung abgeben
Technische Details STPSC12065GY-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 12A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 750pF @ 0V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STPSC12065GY-TR nach Preis ab 3.12 EUR bis 6.41 EUR
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STPSC12065GY-TR | Hersteller : STMicroelectronics | Rectifier Diode Schottky SiC 650V 12A Automotive 3-Pin(2+Tab) D2PAK T/R |
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STPSC12065GY-TR | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 12A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 12A Max. load current: 22A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 220A Max. forward voltage: 1.65V Leakage current: 1mA Application: automotive industry Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STPSC12065GY-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 12A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 750pF @ 0V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STPSC12065GY-TR | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 12A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 12A Max. load current: 22A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 220A Max. forward voltage: 1.65V Leakage current: 1mA Application: automotive industry |
Produkt ist nicht verfügbar |