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STPSC12065GY-TR

STPSC12065GY-TR STMicroelectronics


en.DM00289670.pdf
Hersteller: STMicroelectronics
SiC Schottky Diodes Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diode
auf Bestellung 850 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.49 EUR
10+4.73 EUR
100+3.52 EUR
500+3.27 EUR
1000+2.96 EUR
2000+2.59 EUR
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Technische Details STPSC12065GY-TR STMicroelectronics

Description: DIODE SIL CARBIDE 650V 12A D2PAK, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: D2PAK, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 750pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.

Weitere Produktangebote STPSC12065GY-TR nach Preis ab 3.28 EUR bis 7.87 EUR

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STPSC12065GY-TR STPSC12065GY-TR Hersteller : STMicroelectronics en.DM00289670.pdf Description: DIODE SIL CARBIDE 650V 12A D2PAK
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.87 EUR
10+5.29 EUR
100+3.96 EUR
500+3.28 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STPSC12065GY-TR STPSC12065GY-TR Hersteller : STMicroelectronics en.DM00289670.pdf Description: DIODE SIL CARBIDE 650V 12A D2PAK
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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