STPSC12H065D STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Description: DIODE SIL CARB 650V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.04 EUR |
100+ | 5.98 EUR |
500+ | 5.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STPSC12H065D STMicroelectronics
Description: DIODE SIL CARB 650V 12A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 600pF @ 0V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A, Current - Reverse Leakage @ Vr: 120 µA @ 650 V.
Weitere Produktangebote STPSC12H065D nach Preis ab 5.15 EUR bis 10.56 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STPSC12H065D | Hersteller : STMicroelectronics | Schottky Diodes & Rectifiers 650 V, 12 A High Surge Silicon Carbide Power Schottky Diode |
auf Bestellung 971 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||
STPSC12H065D | Hersteller : STMicroelectronics | Rectifier Diode Schottky 650V 12A 2-Pin(2+Tab) TO-220AC Tube |
Produkt ist nicht verfügbar |
||||||||||||||||
STPSC12H065D | Hersteller : STMicroelectronics | Diode Schottky 650V 12A 2-Pin(2+Tab) TO-220AC Tube |
Produkt ist nicht verfügbar |
||||||||||||||||
STPSC12H065D | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 650V; 12A; TO220AC; tube; Ir: 500uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 12A Max. load current: 22A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Heatsink thickness: 1.23...1.32mm Max. forward impulse current: 0.4kA Max. forward voltage: 2.5V Leakage current: 0.5mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
STPSC12H065D | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 650V; 12A; TO220AC; tube; Ir: 500uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 650V Load current: 12A Max. load current: 22A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Heatsink thickness: 1.23...1.32mm Max. forward impulse current: 0.4kA Max. forward voltage: 2.5V Leakage current: 0.5mA |
Produkt ist nicht verfügbar |