STPSC12H065DY STMicroelectronics
Hersteller: STMicroelectronics
SiC Schottky Diodes Automotive 650 V, 12 A High Surge Silicon Carbide Power Schottky Diode
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.16 EUR |
| 10+ | 4.3 EUR |
| 100+ | 4.11 EUR |
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Technische Details STPSC12H065DY STMicroelectronics
Description: DIODE SIL CARB 650V 12A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 600pF @ 0V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A, Current - Reverse Leakage @ Vr: 120 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote STPSC12H065DY nach Preis ab 5.57 EUR bis 8.21 EUR
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STPSC12H065DY | STMicroelectronics |
Description: DIODE SIL CARB 650V 12A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 600pF @ 0V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A Current - Reverse Leakage @ Vr: 120 µA @ 650 V Qualification: AEC-Q101 |
auf Bestellung 219 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC12H065DY |
|
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 219 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.21 EUR |
| 10+ | 6.89 EUR |
| 100+ | 5.57 EUR |