STPSC15H12DY STMicroelectronics
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Technische Details STPSC15H12DY STMicroelectronics
Description: DIODE SIL CARB 1.2KV 15A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1200pF @ 0V, 1MHz, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A, Current - Reverse Leakage @ Vr: 90 µA @ 1200 V, Qualification: AEC-Q101.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STPSC15H12DY | Hersteller : STMicroelectronics |
 STPSC15H12DY THT Schottky diodes |
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STPSC15H12DY | Hersteller : STMicroelectronics |
Description: DIODE SIL CARB 1.2KV 15A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1200pF @ 0V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A Current - Reverse Leakage @ Vr: 90 µA @ 1200 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |