STPSC20065DI STMicroelectronics
auf Bestellung 3710 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 7.08 EUR |
| 26+ | 5.44 EUR |
| 50+ | 5.18 EUR |
| 100+ | 4.53 EUR |
| 500+ | 4.11 EUR |
| 1000+ | 3.5 EUR |
| 2000+ | 3.21 EUR |
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Technische Details STPSC20065DI STMicroelectronics
Description: DIODE SIC 650V 20A TO220AC INS, Packaging: Tube, Package / Case: TO-220-2 Insulated, TO-220AC, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1250pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220AC ins, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A, Current - Reverse Leakage @ Vr: 300 µA @ 650 V.
Weitere Produktangebote STPSC20065DI nach Preis ab 3.21 EUR bis 11.53 EUR
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STPSC20065DI | Hersteller : STMicroelectronics |
 Diode Schottky SiC 650V 20A 2-Pin(2+Tab) TO-220AC Ins Tube |
auf Bestellung 3710 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC20065DI | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; Ir: 2mA Case: TO220AC Mounting: THT Kind of package: tube Max. off-state voltage: 650V Max. load current: 40A Max. forward voltage: 1.65V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 0.4kA Leakage current: 2mA Type of diode: Schottky rectifying Technology: SiC Heatsink thickness: 1.23...1.32mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 43 Stücke: Lieferzeit 7-14 Tag (e) |
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STPSC20065DI | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; Ir: 2mA Case: TO220AC Mounting: THT Kind of package: tube Max. off-state voltage: 650V Max. load current: 40A Max. forward voltage: 1.65V Load current: 20A Semiconductor structure: single diode Max. forward impulse current: 0.4kA Leakage current: 2mA Type of diode: Schottky rectifying Technology: SiC Heatsink thickness: 1.23...1.32mm |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC20065DI | Hersteller : STMicroelectronics |
SiC Schottky Diodes 650 V power Schottky silicon carbide diode |
auf Bestellung 737 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC20065DI | Hersteller : STMicroelectronics |
Description: DIODE SIC 650V 20A TO220AC INS Packaging: Tube Package / Case: TO-220-2 Insulated, TO-220AC Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1250pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC ins Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A Current - Reverse Leakage @ Vr: 300 µA @ 650 V |
auf Bestellung 926 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC20065DI | Hersteller : STMicroelectronics |
Diode Schottky SiC 650V 20A 2-Pin(2+Tab) TO-220AC Ins Tube |
Produkt ist nicht verfügbar |
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 |
STPSC20065DI | Hersteller : STMicroelectronics |
Diode Schottky SiC 650V 20A 2-Pin(2+Tab) TO-220AC Ins Tube |
Produkt ist nicht verfügbar |