STPSC20065DI STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 21+ | 8.62 EUR |
| 26+ | 6.77 EUR |
| 50+ | 6.56 EUR |
| 100+ | 5.82 EUR |
| 500+ | 5.43 EUR |
| 1000+ | 4.74 EUR |
| 2000+ | 4.44 EUR |
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Technische Details STPSC20065DI STMicroelectronics
Description: DIODE SIC 650V 20A TO220AC INS, Packaging: Tube, Package / Case: TO-220-2 Insulated, TO-220AC, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1250pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-220AC ins, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A, Current - Reverse Leakage @ Vr: 300 µA @ 650 V.
Weitere Produktangebote STPSC20065DI nach Preis ab 3.92 EUR bis 13.01 EUR
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STPSC20065DI | STMicroelectronics |
 Diode Schottky SiC 650V 20A 2-Pin(2+Tab) TO-220AC Ins Tube |
auf Bestellung 3710 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC20065DI | STMicroelectronics |
SiC Schottky Diodes 650 V power Schottky silicon carbide diode |
auf Bestellung 737 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC20065DI | STMicroelectronics |
Description: DIODE SIC 650V 20A TO220AC INS Packaging: Tube Package / Case: TO-220-2 Insulated, TO-220AC Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1250pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC ins Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A Current - Reverse Leakage @ Vr: 300 µA @ 650 V |
auf Bestellung 643 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STPSC20065DI |
|
Hersteller: STMicroelectronics
Diode Schottky SiC 650V 20A 2-Pin(2+Tab) TO-220AC Ins Tube
Diode Schottky SiC 650V 20A 2-Pin(2+Tab) TO-220AC Ins Tube
auf Bestellung 3710 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 8.62 EUR |
| 26+ | 6.62 EUR |
| 50+ | 6.31 EUR |
| 100+ | 5.51 EUR |
| 500+ | 5.01 EUR |
| 1000+ | 4.26 EUR |
| 2000+ | 3.92 EUR |
| STPSC20065DI |
|
Hersteller: STMicroelectronics
SiC Schottky Diodes 650 V power Schottky silicon carbide diode
SiC Schottky Diodes 650 V power Schottky silicon carbide diode
auf Bestellung 737 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.09 EUR |
| 10+ | 7.02 EUR |
| 100+ | 6.43 EUR |
| 500+ | 5.93 EUR |
| STPSC20065DI |
|
Hersteller: STMicroelectronics
Description: DIODE SIC 650V 20A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Description: DIODE SIC 650V 20A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
auf Bestellung 643 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.01 EUR |
| 50+ | 6.94 EUR |
| 100+ | 6.35 EUR |
| 500+ | 5.32 EUR |