STPSC2H065B-TR STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 2A DPAK
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details STPSC2H065B-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 2A DPAK, Current - Reverse Leakage @ Vr: 20 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: DPAK, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 135pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote STPSC2H065B-TR nach Preis ab 1.12 EUR bis 3.19 EUR
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STPSC2H065B-TR | STMicroelectronics |
SiC Schottky Diodes 650 V, 2 A High Surge Silicon Carbide Power Schottky Diode |
auf Bestellung 6993 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC2H065B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 2A DPAK Current - Reverse Leakage @ Vr: 20 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: DPAK Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 135pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 4837 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STPSC2H065B-TR |
|
Hersteller: STMicroelectronics
SiC Schottky Diodes 650 V, 2 A High Surge Silicon Carbide Power Schottky Diode
SiC Schottky Diodes 650 V, 2 A High Surge Silicon Carbide Power Schottky Diode
auf Bestellung 6993 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.87 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.18 EUR |
| 2500+ | 1.12 EUR |
| STPSC2H065B-TR |
|
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 2A DPAK
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE SIL CARBIDE 650V 2A DPAK
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 135pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4837 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 10+ | 2.61 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.4 EUR |