STPSC2H12B2Y-TR STMicroelectronics
Hersteller: STMicroelectronicsDescription: DIODE SIL CARBIDE 1200V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 190pF @ 0V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 12 µA @ 1200 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.68 EUR |
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Technische Details STPSC2H12B2Y-TR STMicroelectronics
Description: DIODE SIL CARBIDE 1200V 5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 190pF @ 0V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: DPAK, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A, Current - Reverse Leakage @ Vr: 12 µA @ 1200 V.
Weitere Produktangebote STPSC2H12B2Y-TR nach Preis ab 1.81 EUR bis 5.3 EUR
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STPSC2H12B2Y-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 1200V 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 190pF @ 0V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A Current - Reverse Leakage @ Vr: 12 µA @ 1200 V |
auf Bestellung 2540 Stücke: Lieferzeit 10-14 Tag (e) |
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Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; reel,tape Semiconductor structure: single diode Technology: SiC Max. off-state voltage: 1.2kV Max. load current: 10A Max. forward voltage: 2.25V Load current: 5A Max. forward impulse current: 15A Leakage current: 80µA Application: automotive industry Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DPAK Anzahl je Verpackung: 2500 Stücke |
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| STPSC2H12B2Y-TR | Hersteller : STMicroelectronics |
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