STPSC30G12WLY STMicroelectronics
Hersteller: STMicroelectronicsSchottky Diodes & Rectifiers Automotive 1200 V, 30 A Silicon Carbide Diode
auf Bestellung 174 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 27.67 EUR |
| 10+ | 25.43 EUR |
| 25+ | 24.39 EUR |
| 50+ | 23.58 EUR |
| 100+ | 21.47 EUR |
| 250+ | 20.43 EUR |
| 600+ | 19.11 EUR |
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Technische Details STPSC30G12WLY STMicroelectronics
Description: AUTOMOTIVE 1200 V, 30 A SILICON, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2272pF @ 0V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: DO-247 LL, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A, Current - Reverse Leakage @ Vr: 225 µA @ 1200 V, Qualification: AEC-Q101.
Weitere Produktangebote STPSC30G12WLY nach Preis ab 25.02 EUR bis 28.41 EUR
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STPSC30G12WLY | Hersteller : STMicroelectronics |
Description: AUTOMOTIVE 1200 V, 30 A SILICON Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2272pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: DO-247 LL Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 225 µA @ 1200 V Qualification: AEC-Q101 |
auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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