STPSC30G12WLY STMicroelectronics
Hersteller: STMicroelectronics
Schottky Diodes & Rectifiers Automotive 1200 V, 30 A Silicon Carbide Diode
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.93 EUR |
| 10+ | 30.26 EUR |
| 25+ | 29.02 EUR |
| 50+ | 28.06 EUR |
| 100+ | 25.55 EUR |
| 250+ | 24.31 EUR |
| 600+ | 22.74 EUR |
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Technische Details STPSC30G12WLY STMicroelectronics
Description: AUTOMOTIVE 1200 V, 30 A SILICON, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2272pF @ 0V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: DO-247 LL, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A, Current - Reverse Leakage @ Vr: 225 µA @ 1200 V, Qualification: AEC-Q101.
Weitere Produktangebote STPSC30G12WLY nach Preis ab 29.77 EUR bis 33.81 EUR
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STPSC30G12WLY | STMicroelectronics |
Description: AUTOMOTIVE 1200 V, 30 A SILICONPackaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2272pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: DO-247 LL Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A Current - Reverse Leakage @ Vr: 225 µA @ 1200 V Qualification: AEC-Q101 |
auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STPSC30G12WLY |
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Hersteller: STMicroelectronics
Description: AUTOMOTIVE 1200 V, 30 A SILICON
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2272pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247 LL
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 225 µA @ 1200 V
Qualification: AEC-Q101
Description: AUTOMOTIVE 1200 V, 30 A SILICON
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2272pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-247 LL
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 30 A
Current - Reverse Leakage @ Vr: 225 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 33.81 EUR |
| 10+ | 29.77 EUR |


