STPSC4H065DI STMicroelectronics
auf Bestellung 135 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.28 EUR |
| 10+ | 2.87 EUR |
| 100+ | 2.62 EUR |
| 500+ | 1.97 EUR |
| 1000+ | 1.80 EUR |
| 2000+ | 1.75 EUR |
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Technische Details STPSC4H065DI STMicroelectronics
Description: DIODE SIC 650V 4A TO220AC INS, Packaging: Tube, Package / Case: TO-220-2 Insulated, TO-220AC, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-220AC ins, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote STPSC4H065DI
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STPSC4H065DI | Hersteller : STMicroelectronics |
 STPSC4H065DI THT Schottky diodes |
Produkt ist nicht verfügbar |
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STPSC4H065DI | Hersteller : STMicroelectronics |
Description: DIODE SIC 650V 4A TO220AC INS Packaging: Tube Package / Case: TO-220-2 Insulated, TO-220AC Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 4A Supplier Device Package: TO-220AC ins Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |