STPSC4H065DI STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 5.53 EUR |
| 10+ | 2.69 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.36 EUR |
| 2000+ | 1.29 EUR |
| 5000+ | 1.28 EUR |
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Technische Details STPSC4H065DI STMicroelectronics
Description: DIODE SIC 650V 4A TO220AC INS, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-220AC ins, Current - Average Rectified (Io): 4A, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Insulated, TO-220AC, Packaging: Tube.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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STPSC4H065DI | Hersteller : STMicroelectronics |
 Description: DIODE SIC 650V 4A TO220AC INSCurrent - Reverse Leakage @ Vr: 40 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-220AC ins Current - Average Rectified (Io): 4A Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Insulated, TO-220AC Packaging: Tube |
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