STPSC4H065DI STMicroelectronics
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.53 EUR |
| 10+ | 2.69 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.36 EUR |
| 2000+ | 1.29 EUR |
| 5000+ | 1.28 EUR |
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Technische Details STPSC4H065DI STMicroelectronics
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.5V, Type of diode: Schottky rectifying, Case: TO220AC, Technology: SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 4A, Semiconductor structure: single diode, Max. forward voltage: 2.5V, Max. load current: 17A, Leakage current: 170µA, Max. forward impulse current: 200A, Kind of package: tube, Heatsink thickness: 1.23...1.32mm, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote STPSC4H065DI
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STPSC4H065DI | Hersteller : STMicroelectronics |
 Diode Schottky 650V 4A 2-Pin(2+Tab) TO-220AC Ins Tube |
Produkt ist nicht verfügbar |
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| STPSC4H065DI | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.5V Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 2.5V Max. load current: 17A Leakage current: 170µA Max. forward impulse current: 200A Kind of package: tube Heatsink thickness: 1.23...1.32mm Anzahl je Verpackung: 1 Stücke |
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STPSC4H065DI | Hersteller : STMicroelectronics |
Description: DIODE SIC 650V 4A TO220AC INS Packaging: Tube Package / Case: TO-220-2 Insulated, TO-220AC Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 4A Supplier Device Package: TO-220AC ins Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |
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| STPSC4H065DI | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; Ufmax: 2.5V Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 2.5V Max. load current: 17A Leakage current: 170µA Max. forward impulse current: 200A Kind of package: tube Heatsink thickness: 1.23...1.32mm |
Produkt ist nicht verfügbar |