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STPSC4H065DLF

STPSC4H065DLF STMicroelectronics

stpsc4h065dlf.pdf
Hersteller: STMicroelectronics
SiC Schottky Diodes 4 A, 650 V SiC Power Schottky Diode
auf Bestellung 1301 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.81 EUR
10+1.74 EUR
3000+1.56 EUR
Mindestbestellmenge: 2
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Technische Details STPSC4H065DLF STMicroelectronics

Description: DIODE SIL CARB 650V 4A POWERFLAT, Current - Reverse Leakage @ Vr: 40 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PowerFlat™ (8x8) HV, Current - Average Rectified (Io): 4A, Capacitance @ Vr, F: 245pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

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STPSC4H065DLF STPSC4H065DLF Hersteller : STMicroelectronics stpsc4h065dlf.pdf Description: DIODE SIL CARB 650V 4A POWERFLAT
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PowerFlat™ (8x8) HV
Current - Average Rectified (Io): 4A
Capacitance @ Vr, F: 245pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
STPSC4H065DLF STPSC4H065DLF Hersteller : STMicroelectronics stpsc4h065dlf.pdf Description: DIODE SIL CARB 650V 4A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 245pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH