STPSC4H065DLF STMicroelectronics
auf Bestellung 1601 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.66 EUR |
| 10+ | 3.13 EUR |
| 100+ | 2.62 EUR |
| 500+ | 2.29 EUR |
| 1000+ | 1.87 EUR |
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Technische Details STPSC4H065DLF STMicroelectronics
Description: DIODE SIL CARB 650V 4A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 245pF @ 0V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: PowerFlat™ (8x8) HV, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
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STPSC4H065DLF | Hersteller : STMicroelectronics |
Description: DIODE SIL CARB 650V 4A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 245pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
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STPSC4H065DLF | Hersteller : STMicroelectronics |
Description: DIODE SIL CARB 650V 4A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 245pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
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