STPSC4H065DLF STMicroelectronics
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 55+ | 2.66 EUR |
| 71+ | 1.98 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.5 EUR |
| 3000+ | 1.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STPSC4H065DLF STMicroelectronics
Description: DIODE SIL CARB 650V 4A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 245pF @ 0V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: PowerFlat™ (8x8) HV, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote STPSC4H065DLF nach Preis ab 1.23 EUR bis 5.19 EUR
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STPSC4H065DLF | Hersteller : STMicroelectronics |
 Diode Schottky 650V 4A 4-Pin Power Flat EP T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC4H065DLF | Hersteller : STMicroelectronics |
SiC Schottky Diodes 4 A, 650 V SiC Power Schottky Diode |
auf Bestellung 1367 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC4H065DLF | Hersteller : STMicroelectronics |
Diode Schottky 650V 4A 4-Pin Power Flat EP T/R |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC4H065DLF | Hersteller : STMicroelectronics |
Rectifier Diode Schottky Si 650V 4A 5-Pin Power Flat EP T/R |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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| STPSC4H065DLF | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerFLAT; SiC; SMD; 650V; 4A Type of diode: Schottky rectifying Case: PowerFLAT Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.95V Max. load current: 17A Leakage current: 170µA Max. forward impulse current: 0.4kA Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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STPSC4H065DLF | Hersteller : STMicroelectronics |
Description: DIODE SIL CARB 650V 4A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 245pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |
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STPSC4H065DLF | Hersteller : STMicroelectronics |
Description: DIODE SIL CARB 650V 4A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 245pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |
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| STPSC4H065DLF | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerFLAT; SiC; SMD; 650V; 4A Type of diode: Schottky rectifying Case: PowerFLAT Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Max. forward voltage: 1.95V Max. load current: 17A Leakage current: 170µA Max. forward impulse current: 0.4kA Kind of package: reel; tape |
Produkt ist nicht verfügbar |