STPSC4H065DLF STMicroelectronics
auf Bestellung 2185 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 6.03 EUR |
| 10+ | 5.43 EUR |
| 100+ | 4.37 EUR |
| 500+ | 3.59 EUR |
| 1000+ | 2.99 EUR |
| 3000+ | 2.96 EUR |
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Produktbewertung abgeben
Technische Details STPSC4H065DLF STMicroelectronics
Description: DIODE SIL CARB 650V 4A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 245pF @ 0V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: PowerFlat™ (8x8) HV, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote STPSC4H065DLF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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STPSC4H065DLF | Hersteller : STMicroelectronics |
 Rectifier Diode Schottky Si 650V 4A 5-Pin Power Flat EP T/R |
auf Bestellung 1992 Stücke: Lieferzeit 14-21 Tag (e) |
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| STPSC4H065DLF | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 4A; PowerFLAT; reel,tape Case: PowerFLAT Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. load current: 17A Max. forward voltage: 1.95V Load current: 4A Max. forward impulse current: 0.4kA Leakage current: 170µA Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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STPSC4H065DLF | Hersteller : STMicroelectronics |
Description: DIODE SIL CARB 650V 4A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 245pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |
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STPSC4H065DLF | Hersteller : STMicroelectronics |
Description: DIODE SIL CARB 650V 4A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 245pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 4 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |
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| STPSC4H065DLF | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 4A; PowerFLAT; reel,tape Case: PowerFLAT Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 650V Type of diode: Schottky rectifying Max. load current: 17A Max. forward voltage: 1.95V Load current: 4A Max. forward impulse current: 0.4kA Leakage current: 170µA |
Produkt ist nicht verfügbar |