STPSC6H065BY-TR STMicroelectronics
Hersteller: STMicroelectronicsSiC Schottky Diodes Automotive 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
auf Bestellung 1713 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.13 EUR |
| 10+ | 2.71 EUR |
| 100+ | 2.27 EUR |
| 500+ | 2.02 EUR |
| 1000+ | 2.01 EUR |
| 2500+ | 1.87 EUR |
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Technische Details STPSC6H065BY-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 0V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: DPAK, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STPSC6H065BY-TR
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STPSC6H065BY-TR | Hersteller : STMicroelectronics |
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STPSC6H065BY-TR SMD Schottky diodes |
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STPSC6H065BY-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 60 µA @ 650 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STPSC6H065BY-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 60 µA @ 650 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |