STPSC6H065BY-TR STMicroelectronics
Hersteller: STMicroelectronics
SiC Schottky Diodes Automotive 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.09 EUR |
| 10+ | 3.31 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.18 EUR |
| 1000+ | 2.12 EUR |
| 2500+ | 2.05 EUR |
| 5000+ | 1.98 EUR |
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Technische Details STPSC6H065BY-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 0V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: DPAK, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote STPSC6H065BY-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STPSC6H065BY-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
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STPSC6H065BY-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Current - Reverse Leakage @ Vr: 60 µA @ 650 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STPSC6H065BY-TR |
|
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STPSC6H065BY-TR |
|
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARBIDE 650V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH