Technische Details STPSC6H065DLF STMicroelectronics
Description: DIODE SIC 650V 6A POWERFLAT HV, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: PowerFlat™ (8x8) HV, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 350pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote STPSC6H065DLF nach Preis ab 1.13 EUR bis 6.7 EUR
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STPSC6H065DLF | STMicroelectronics |
 Diode Schottky 650V 6A 4-Pin Power Flat EP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC6H065DLF | STMicroelectronics |
Diode Schottky 650V 6A 4-Pin Power Flat EP T/R |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC6H065DLF | STMicroelectronics |
Diode Schottky 650V 6A 4-Pin Power Flat EP T/R |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
|
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STPSC6H065DLF | STMicroelectronics |
Description: DIODE SIC 650V 6A POWERFLAT HV Current - Reverse Leakage @ Vr: 60 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PowerFlat™ (8x8) HV Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 350pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC6H065DLF | STMicroelectronics |
Description: DIODE SIC 650V 6A POWERFLAT HV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 350pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
auf Bestellung 10586 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC6H065DLF |
|
Hersteller: STMicroelectronics
Diode Schottky 650V 6A 4-Pin Power Flat EP T/R
Diode Schottky 650V 6A 4-Pin Power Flat EP T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.37 EUR |
| STPSC6H065DLF |
|
Hersteller: STMicroelectronics
Diode Schottky 650V 6A 4-Pin Power Flat EP T/R
Diode Schottky 650V 6A 4-Pin Power Flat EP T/R
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 124+ | 1.43 EUR |
| 125+ | 1.39 EUR |
| 126+ | 1.36 EUR |
| 250+ | 1.31 EUR |
| 500+ | 1.29 EUR |
| STPSC6H065DLF |
|
Hersteller: STMicroelectronics
Diode Schottky 650V 6A 4-Pin Power Flat EP T/R
Diode Schottky 650V 6A 4-Pin Power Flat EP T/R
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 123+ | 1.44 EUR |
| 124+ | 1.38 EUR |
| 125+ | 1.32 EUR |
| 126+ | 1.25 EUR |
| 250+ | 1.19 EUR |
| 500+ | 1.13 EUR |
| STPSC6H065DLF |
|
Hersteller: STMicroelectronics
Description: DIODE SIC 650V 6A POWERFLAT HV
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PowerFlat™ (8x8) HV
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: DIODE SIC 650V 6A POWERFLAT HV
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PowerFlat™ (8x8) HV
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.17 EUR |
| STPSC6H065DLF |
|
Hersteller: STMicroelectronics
Description: DIODE SIC 650V 6A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIC 650V 6A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 350pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 10586 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.7 EUR |
| 10+ | 4 EUR |
| 100+ | 3.01 EUR |
| 500+ | 2.5 EUR |
| 1000+ | 2.32 EUR |