STPSC6H065DLF STMicroelectronics
| Anzahl | Preis |
|---|---|
| 100+ | 1.38 EUR |
| 101+ | 1.32 EUR |
| 102+ | 1.26 EUR |
| 250+ | 1.2 EUR |
| 500+ | 1.14 EUR |
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Technische Details STPSC6H065DLF STMicroelectronics
Description: DIODE SIC 650V 6A POWERFLAT HV, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 350pF @ 0V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: PowerFlat™ (8x8) HV, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote STPSC6H065DLF nach Preis ab 1.09 EUR bis 5.63 EUR
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STPSC6H065DLF | Hersteller : STMicroelectronics |
 Diode Schottky 650V 6A 4-Pin Power Flat EP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC6H065DLF | Hersteller : STMicroelectronics |
Diode Schottky 650V 6A 4-Pin Power Flat EP T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC6H065DLF | Hersteller : STMicroelectronics |
Description: DIODE SIC 650V 6A POWERFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 350pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC6H065DLF | Hersteller : STMicroelectronics |
Diode Schottky 650V 6A 4-Pin Power Flat EP T/R |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC6H065DLF | Hersteller : STMicroelectronics |
SiC Schottky Diodes 6 A, 650 V SiC Power Schottky Diode |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC6H065DLF | Hersteller : STMicroelectronics |
Description: DIODE SIC 650V 6A POWERFLAT HV Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 350pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 6 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
auf Bestellung 10586 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC6H065DLF | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PowerFLAT; SiC; SMD; 650V; 6A Type of diode: Schottky rectifying Case: PowerFLAT Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.95V Max. load current: 25A Leakage current: 0.25mA Max. forward impulse current: 0.6kA Kind of package: reel; tape |
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