STPSC6H065G-TR STMicroelectronics
auf Bestellung 647 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 7.07 EUR |
| 10+ | 5.88 EUR |
| 100+ | 4.65 EUR |
| 500+ | 3.98 EUR |
| 1000+ | 3.28 EUR |
| 2000+ | 3.09 EUR |
| 5000+ | 3.02 EUR |
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Technische Details STPSC6H065G-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 6A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 300pF @ 0V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote STPSC6H065G-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| STPSC6H065G-TR | Hersteller : STMicroelectronics |
 STPSC6H065G-TR SMD Schottky diodes |
Produkt ist nicht verfügbar |
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STPSC6H065G-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
Produkt ist nicht verfügbar |
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STPSC6H065G-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 6A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
Produkt ist nicht verfügbar |