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STPSC6H12B-TR1

STPSC6H12B-TR1 STMicroelectronics


en.SGDIODRECT1120.pdf Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 1.2KV 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+4.01 EUR
5000+ 3.84 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details STPSC6H12B-TR1 STMicroelectronics

Description: DIODE SIL CARBIDE 1.2KV 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 330pF @ 0V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: DPAK, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A, Current - Reverse Leakage @ Vr: 400 µA @ 1200 V.

Weitere Produktangebote STPSC6H12B-TR1 nach Preis ab 4.06 EUR bis 8.37 EUR

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STPSC6H12B-TR1 STPSC6H12B-TR1 Hersteller : STMicroelectronics en.SGDIODRECT1120.pdf Description: DIODE SIL CARBIDE 1.2KV 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 330pF @ 0V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 6 A
Current - Reverse Leakage @ Vr: 400 µA @ 1200 V
auf Bestellung 7763 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.24 EUR
10+ 6.91 EUR
100+ 5.59 EUR
500+ 4.97 EUR
1000+ 4.26 EUR
Mindestbestellmenge: 4
STPSC6H12B-TR1 STPSC6H12B-TR1 Hersteller : STMicroelectronics SGST_S_A0002808227_1-2563828.pdf Schottky Diodes & Rectifiers 1200V 6A Schottky 1.55V Vf 30pF 29nC
auf Bestellung 2421 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+8.37 EUR
10+ 7.05 EUR
100+ 5.69 EUR
250+ 5.51 EUR
500+ 5.04 EUR
1000+ 4.32 EUR
2500+ 4.06 EUR
Mindestbestellmenge: 7
STPSC6H12B-TR1 Hersteller : STMicroelectronics en.SGDIODRECT1120.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 1.2kV; 6A; D2PAKHV2L; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 2.6V
Case: D2PAKHV
Kind of package: reel; tape
Max. forward impulse current: 30A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
STPSC6H12B-TR1 Hersteller : STMicroelectronics en.SGDIODRECT1120.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 1.2kV; 6A; D2PAKHV2L; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 2.6V
Case: D2PAKHV
Kind of package: reel; tape
Max. forward impulse current: 30A
Produkt ist nicht verfügbar