STPSC8065DY STMICROELECTRONICS
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STPSC8065DY - SiC-Schottky-Diode, Einfach, 650 V, 8 A, 28 nC, TO-220AC
tariffCode: 85411000
Bauform - Diode: TO-220AC
Kapazitive Gesamtladung: 28nC
rohsCompliant: YES
Diodenmontage: Durchsteckmontage
hazardous: false
rohsPhthalatesCompliant: YES
Diodenkonfiguration: Einfach
Qualifikation: AEC-Q101
usEccn: EAR99
Durchschnittlicher Durchlassstrom: 8A
euEccn: NLR
Wiederkehrende Spitzensperrspannung: 650V
Anzahl der Pins: 2 Pins
Produktpalette: -
productTraceability: No
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (17-Dec-2015)
| Anzahl | Privatkunde |
|---|---|
| 69+ | 3.62 EUR |
| 76+ | 3.06 EUR |
| 100+ | 2.7 EUR |
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Technische Details STPSC8065DY STMICROELECTRONICS
Description: DIODE SIL CARB 650V 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 540pF @ 0V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A, Current - Reverse Leakage @ Vr: 105 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote STPSC8065DY nach Preis ab 3.45 EUR bis 7.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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STPSC8065DY | STMicroelectronics |
Schottky Diodes & Rectifiers Automotive 650 V, 8 A SiC Power schottky Diode |
auf Bestellung 1000 Stücke: Lieferzeit 325-329 Tag (e) |
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STPSC8065DY | STMicroelectronics |
Description: DIODE SIL CARB 650V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 540pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A Current - Reverse Leakage @ Vr: 105 µA @ 650 V Qualification: AEC-Q101 |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STPSC8065DY |
|
Hersteller: STMicroelectronics
Schottky Diodes & Rectifiers Automotive 650 V, 8 A SiC Power schottky Diode
Schottky Diodes & Rectifiers Automotive 650 V, 8 A SiC Power schottky Diode
auf Bestellung 1000 Stücke:
Lieferzeit 325-329 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.2 EUR |
| 10+ | 5.59 EUR |
| 100+ | 4.58 EUR |
| 500+ | 3.89 EUR |
| 1000+ | 3.45 EUR |
| STPSC8065DY |
|
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 540pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A
Current - Reverse Leakage @ Vr: 105 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 540pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A
Current - Reverse Leakage @ Vr: 105 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.58 EUR |