STPSC8065DY STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 540pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A
Current - Reverse Leakage @ Vr: 105 µA @ 650 V
Description: DIODE SIL CARB 650V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 540pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A
Current - Reverse Leakage @ Vr: 105 µA @ 650 V
auf Bestellung 562 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.54 EUR |
10+ | 4.99 EUR |
100+ | 4.08 EUR |
500+ | 3.48 EUR |
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Technische Details STPSC8065DY STMicroelectronics
Description: DIODE SIL CARB 650V 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 540pF @ 0V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A, Current - Reverse Leakage @ Vr: 105 µA @ 650 V.
Weitere Produktangebote STPSC8065DY nach Preis ab 4.29 EUR bis 7.7 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STPSC8065DY | Hersteller : STMicroelectronics | Schottky Diodes & Rectifiers Automotive 650 V, 8 A SiC Power schottky Diode |
auf Bestellung 1000 Stücke: Lieferzeit 329-343 Tag (e) |
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STPSC8065DY | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STPSC8065DY - SiC-Schottky-Diode, Einfach, 650 V, 8 A, 28 nC, TO-220AC tariffCode: 85411000 productTraceability: No Kapazitive Gesamtladung: 28nC rohsCompliant: YES Durchschnittlicher Durchlassstrom: 8A euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Wiederkehrende Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C usEccn: EAR99 |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC8065DY | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 650V; 8A; TO220AC; tube; Ir: 750uA Kind of package: tube Max. off-state voltage: 650V Max. load current: 36A Max. forward voltage: 1.65V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 200A Leakage current: 0.75mA Application: automotive industry Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Mounting: THT Case: TO220AC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STPSC8065DY | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 650V; 8A; TO220AC; tube; Ir: 750uA Kind of package: tube Max. off-state voltage: 650V Max. load current: 36A Max. forward voltage: 1.65V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 200A Leakage current: 0.75mA Application: automotive industry Type of diode: Schottky rectifying Heatsink thickness: 1.23...1.32mm Mounting: THT Case: TO220AC |
Produkt ist nicht verfügbar |