STPSC806D STMicroelectronics
auf Bestellung 980 Stücke:
Lieferzeit 332-336 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.07 EUR |
| 10+ | 4.63 EUR |
| 100+ | 4.15 EUR |
| 500+ | 3.64 EUR |
| 1000+ | 3.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STPSC806D STMicroelectronics
Description: DIODE SIL CARB 600V 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 450pF @ 0V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 100 µA @ 600 V.
Weitere Produktangebote STPSC806D
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
STPSC806D | Hersteller : STMicroelectronics |
 Rectifier Diode Schottky 600V 8A 2-Pin(2+Tab) TO-220AC Tube |
auf Bestellung 745 Stücke: Lieferzeit 14-21 Tag (e) |
|
 |
STPSC806D | Hersteller : STMicroelectronics |
Description: DIODE SIL CARB 600V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 450pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
Produkt ist nicht verfügbar |
|
 |
STPSC806D | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 2.1V Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Max. forward voltage: 2.1V Max. forward impulse current: 120A Kind of package: tube Heatsink thickness: 1.23...1.32mm Max. load current: 30A |
Produkt ist nicht verfügbar |