STPSC806D STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 5.07 EUR |
| 10+ | 4.63 EUR |
| 100+ | 4.15 EUR |
| 500+ | 3.64 EUR |
| 1000+ | 3.08 EUR |
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Technische Details STPSC806D STMicroelectronics
Description: DIODE SIL CARB 600V 8A TO220AC, Current - Reverse Leakage @ Vr: 100 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 450pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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STPSC806D | Hersteller : STMicroelectronics |
 Description: DIODE SIL CARB 600V 8A TO220ACCurrent - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-220AC Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 450pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube |
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