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STPSC8H065B-TR

STPSC8H065B-TR STMicroelectronics


en.DM00063470.pdf Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 10000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+4.41 EUR
Mindestbestellmenge: 2500
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Technische Details STPSC8H065B-TR STMicroelectronics

Description: DIODE SIL CARBIDE 650V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 414pF @ 0V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: DPAK, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A, Current - Reverse Leakage @ Vr: 80 µA @ 650 V.

Weitere Produktangebote STPSC8H065B-TR nach Preis ab 3.87 EUR bis 8.03 EUR

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STPSC8H065B-TR STPSC8H065B-TR Hersteller : STMicroelectronics stpsc8h065-1851968.pdf Schottky Diodes & Rectifiers 650 V 8A Schottky silicon carbide DPAK
auf Bestellung 16488 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+7.54 EUR
10+ 6.76 EUR
100+ 5.54 EUR
500+ 4.71 EUR
1000+ 4.55 EUR
2500+ 3.87 EUR
Mindestbestellmenge: 7
STPSC8H065B-TR STPSC8H065B-TR Hersteller : STMicroelectronics en.DM00063470.pdf Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 17355 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.03 EUR
10+ 7.21 EUR
100+ 5.91 EUR
500+ 5.03 EUR
1000+ 4.41 EUR
Mindestbestellmenge: 4
STPSC8H065B-TR Hersteller : STMicroelectronics en.DM00063470.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 8A; DPAK; reel,tape
Mounting: SMD
Max. load current: 33A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 335µA
Case: DPAK
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Max. forward voltage: 2.5V
Max. off-state voltage: 650V
Load current: 8A
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
STPSC8H065B-TR Hersteller : STMicroelectronics en.DM00063470.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 8A; DPAK; reel,tape
Mounting: SMD
Max. load current: 33A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 335µA
Case: DPAK
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Max. forward voltage: 2.5V
Max. off-state voltage: 650V
Load current: 8A
Produkt ist nicht verfügbar