STPSC8H065B-TR STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 4.41 EUR |
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Technische Details STPSC8H065B-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 414pF @ 0V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: DPAK, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A, Current - Reverse Leakage @ Vr: 80 µA @ 650 V.
Weitere Produktangebote STPSC8H065B-TR nach Preis ab 3.87 EUR bis 8.03 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STPSC8H065B-TR | Hersteller : STMicroelectronics | Schottky Diodes & Rectifiers 650 V 8A Schottky silicon carbide DPAK |
auf Bestellung 16488 Stücke: Lieferzeit 14-28 Tag (e) |
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STPSC8H065B-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 414pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
auf Bestellung 17355 Stücke: Lieferzeit 21-28 Tag (e) |
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STPSC8H065B-TR | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 8A; DPAK; reel,tape Mounting: SMD Max. load current: 33A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 335µA Case: DPAK Type of diode: Schottky rectifying Max. forward impulse current: 420A Max. forward voltage: 2.5V Max. off-state voltage: 650V Load current: 8A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STPSC8H065B-TR | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 8A; DPAK; reel,tape Mounting: SMD Max. load current: 33A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 335µA Case: DPAK Type of diode: Schottky rectifying Max. forward impulse current: 420A Max. forward voltage: 2.5V Max. off-state voltage: 650V Load current: 8A |
Produkt ist nicht verfügbar |