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STPSC8H065BY-TR

STPSC8H065BY-TR STMicroelectronics


stpsc8h065by-tr.pdf
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.05 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STPSC8H065BY-TR STMicroelectronics

Description: DIODE SIL CARBIDE 650V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 414pF @ 0V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: DPAK, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Current - Reverse Leakage @ Vr: 80 µA @ 650 V, Qualification: AEC-Q101.

Weitere Produktangebote STPSC8H065BY-TR nach Preis ab 2.01 EUR bis 6.39 EUR

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STPSC8H065BY-TR STPSC8H065BY-TR Hersteller : STMicroelectronics stpsc8h065by-tr.pdf SiC Schottky Diodes Automotive 650 V, 8 A Silicon Carbide Diode
auf Bestellung 2472 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.35 EUR
10+3.5 EUR
100+2.73 EUR
500+2.39 EUR
1000+2.27 EUR
2500+2.01 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STPSC8H065BY-TR STPSC8H065BY-TR Hersteller : STMicroelectronics stpsc8h065by-tr.pdf Description: DIODE SIL CARBIDE 650V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 414pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 4051 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.39 EUR
10+4.19 EUR
100+2.94 EUR
500+2.43 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH