STPSC8H065DI STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIC 650V 8A TO220AC INS
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC ins
Current - Average Rectified (Io): 8A
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Insulated, TO-220AC
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 6+ | 3.41 EUR |
| 50+ | 2.2 EUR |
| 100+ | 2.18 EUR |
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Technische Details STPSC8H065DI STMicroelectronics
Description: DIODE SIC 650V 8A TO220AC INS, Current - Reverse Leakage @ Vr: 80 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-220AC ins, Current - Average Rectified (Io): 8A, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Insulated, TO-220AC, Packaging: Tube.
Weitere Produktangebote STPSC8H065DI
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STPSC8H065DI | Hersteller : STMicroelectronics |
Schottky Diodes & Rectifiers 650V Pwr Schottky Silicn Carbide Diode |
auf Bestellung 1214 Stücke: Lieferzeit 10-14 Tag (e) |