STPSC8H065DLF STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 8A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Description: DIODE SIL CARB 650V 8A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 460pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 3.94 EUR |
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Technische Details STPSC8H065DLF STMicroelectronics
Description: DIODE SIL CARB 650V 8A POWERFLAT, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 460pF @ 0V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: PowerFlat™ (8x8) HV, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A, Current - Reverse Leakage @ Vr: 80 µA @ 650 V.
Weitere Produktangebote STPSC8H065DLF nach Preis ab 4.19 EUR bis 8.11 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STPSC8H065DLF | Hersteller : STMicroelectronics | Schottky Diodes & Rectifiers 8 A 650 V SiC Power Schottky Diode |
auf Bestellung 2939 Stücke: Lieferzeit 14-28 Tag (e) |
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STPSC8H065DLF | Hersteller : STMicroelectronics |
Description: DIODE SIL CARB 650V 8A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 460pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 8 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
auf Bestellung 5914 Stücke: Lieferzeit 21-28 Tag (e) |
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STPSC8H065DLF | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STPSC8H065DLF - SiC-Schottky-Diode, Einfach, 650 V, 8 A, 26 nC, PowerFLAT tariffCode: 85411000 productTraceability: Yes-Date/Lot Code Kapazitive Gesamtladung: 26nC rohsCompliant: YES Durchschnittlicher Durchlassstrom: 8A euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Wiederkehrende Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C usEccn: EAR99 |
auf Bestellung 2084 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC8H065DLF | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STPSC8H065DLF - SiC-Schottky-Diode, Einfach, 650 V, 8 A, 26 nC, PowerFLAT tariffCode: 85411000 productTraceability: Yes-Date/Lot Code Kapazitive Gesamtladung: 26nC rohsCompliant: YES Durchschnittlicher Durchlassstrom: 8A euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Wiederkehrende Spitzensperrspannung: 650V Betriebstemperatur, max.: 175°C usEccn: EAR99 |
auf Bestellung 2084 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC8H065DLF | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 8A; PowerFLAT; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 8A Max. load current: 32A Semiconductor structure: single diode Case: PowerFLAT Max. forward voltage: 1.95V Max. forward impulse current: 800A Leakage current: 335µA Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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STPSC8H065DLF | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 8A; PowerFLAT; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 8A Max. load current: 32A Semiconductor structure: single diode Case: PowerFLAT Max. forward voltage: 1.95V Max. forward impulse current: 800A Leakage current: 335µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |