STQ1HNK60R-AP STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 400MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
Description: MOSFET N-CH 600V 400MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
auf Bestellung 3852 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STQ1HNK60R-AP STMicroelectronics
Description: STMICROELECTRONICS - STQ1HNK60R-AP - Leistungs-MOSFET, n-Kanal, 600 V, 400 mA, 8 ohm, TO-92, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: YES, Dauer-Drainstrom Id: 400mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 3W, Bauform - Transistor: TO-92, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 8ohm, SVHC: No SVHC (17-Dec-2015).
Weitere Produktangebote STQ1HNK60R-AP nach Preis ab 0.55 EUR bis 1.57 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STQ1HNK60R-AP | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 400MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V |
auf Bestellung 3593 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
STQ1HNK60R-AP | Hersteller : STMicroelectronics | MOSFET N-channel 600 V, 7.3 Ohm typ 1 A SuperMESH PowerMOSFET in TO-92 package |
auf Bestellung 5625 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
STQ1HNK60R-AP | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STQ1HNK60R-AP - Leistungs-MOSFET, n-Kanal, 600 V, 400 mA, 8 ohm, TO-92, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 3W Bauform - Transistor: TO-92 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 8ohm SVHC: No SVHC (17-Dec-2015) |
auf Bestellung 5204 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
STQ1HNK60R-AP | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
STQ1HNK60R-AP Produktcode: 103680 |
Transistoren > MOSFET N-CH ZCODE: 8541290010 |
Produkt ist nicht verfügbar
|
|||||||||||||||||||
STQ1HNK60R-AP | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.25A; Idm: 1.6A; 3W; TO92 Mounting: THT Pulsed drain current: 1.6A Power dissipation: 3W Polarisation: unipolar Drain current: 0.25A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: TO92 On-state resistance: 8.5Ω Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
STQ1HNK60R-AP | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
STQ1HNK60R-AP | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.25A; Idm: 1.6A; 3W; TO92 Mounting: THT Pulsed drain current: 1.6A Power dissipation: 3W Polarisation: unipolar Drain current: 0.25A Kind of channel: enhanced Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: TO92 On-state resistance: 8.5Ω |
Produkt ist nicht verfügbar |