STQ1NK80ZR-AP STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 300MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.55 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STQ1NK80ZR-AP STMicroelectronics
Description: MOSFET N-CH 800V 300MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 3W (Tc), Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).
Weitere Produktangebote STQ1NK80ZR-AP nach Preis ab 0.51 EUR bis 2.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STQ1NK80ZR-AP | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 300MA TO92-3Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 4.5V @ 50µA Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
auf Bestellung 453 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
STQ1NK80ZR-AP | Hersteller : STMicroelectronics |
MOSFETs N Ch 800V 13 Ohm 1A |
auf Bestellung 4966 Stücke: Lieferzeit 10-14 Tag (e) |
|
