Technische Details STR1P2UH7 STMicroelectronics
Description: MOSFET P-CH 20V 1.4A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V, Power Dissipation (Max): 350mW (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V.
Weitere Produktangebote STR1P2UH7
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
STR1P2UH7 | Hersteller : STMicroelectronics | Trans MOSFET P-CH 20V 1.4A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
||
STR1P2UH7 | Hersteller : STMicroelectronics | Trans MOSFET P-CH 20V 1.4A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
||
STR1P2UH7 | Hersteller : STMicroelectronics |
Description: MOSFET P-CH 20V 1.4A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V |
Produkt ist nicht verfügbar |
||
STR1P2UH7 | Hersteller : STMicroelectronics |
Description: MOSFET P-CH 20V 1.4A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 700mA, 4.5V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 10 V |
Produkt ist nicht verfügbar |