STR2P3LLH6

Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V

Hersteller: STMicroelectronics
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; STripFET™; unipolar; -30V; -1.2A; Idm: -8A
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Technology: STripFET™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -8A
Drain current: -1.2A
Gate charge: 6nC
On-state resistance: 90mΩ
Power dissipation: 0.35W
Gate-source voltage: ±20V

Hersteller: STMicroelectronics
MOSFETs P-Channel 30 V, 0.048 Ohm typ 2 A STripFET H6 Power MOSFET in a SOT-23 package

Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V