STR2P3LLH6 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
Description: MOSFET P-CH 30V 2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.41 EUR |
6000+ | 0.39 EUR |
9000+ | 0.36 EUR |
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Technische Details STR2P3LLH6 STMicroelectronics
Description: MOSFET P-CH 30V 2A SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V, Power Dissipation (Max): 350mW (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V.
Weitere Produktangebote STR2P3LLH6 nach Preis ab 0.26 EUR bis 1.22 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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STR2P3LLH6 | Hersteller : STMicroelectronics |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; STripFET™; unipolar; -30V; -1.2A; Idm: -8A Type of transistor: P-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.2A Pulsed drain current: -8A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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STR2P3LLH6 | Hersteller : STMicroelectronics |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; STripFET™; unipolar; -30V; -1.2A; Idm: -8A Type of transistor: P-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.2A Pulsed drain current: -8A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 6nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STR2P3LLH6 | Hersteller : STMicroelectronics | MOSFET P-Channel 30 V, 0.048 Ohm typ 2 A STripFET H6 Power MOSFET in a SOT-23 package |
auf Bestellung 20201 Stücke: Lieferzeit 14-28 Tag (e) |
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STR2P3LLH6 | Hersteller : STMicroelectronics |
Description: MOSFET P-CH 30V 2A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 1A, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 639 pF @ 25 V |
auf Bestellung 14612 Stücke: Lieferzeit 21-28 Tag (e) |
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STR2P3LLH6 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STR2P3LLH6 - Leistungs-MOSFET, p-Kanal, 30 V, 2 A, 0.048 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 350mW Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.048ohm |
auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
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STR2P3LLH6 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STR2P3LLH6 - Leistungs-MOSFET, p-Kanal, 30 V, 2 A, 0.048 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 350mW Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.048ohm |
auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
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STR2P3LLH6 | Hersteller : STMicroelectronics | Trans MOSFET P-CH 30V 2A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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STR2P3LLH6 Produktcode: 150689 |
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STR2P3LLH6 | Hersteller : STMicroelectronics | Trans MOSFET P-CH 30V 2A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |