STS26N3LLH6

STS26N3LLH6 STMicroelectronics


sts26n3llh6-956707.pdf Hersteller: STMicroelectronics
MOSFET N-Ch 30V 0.0039 Ohm 26A STripFET VI DG
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Technische Details STS26N3LLH6 STMicroelectronics

Description: MOSFET N-CH 30V 26A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 13A, 10V, Power Dissipation (Max): 2.7W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V.

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STS26N3LLH6 STS26N3LLH6 Hersteller : STMicroelectronics sts26n3llh6.html Description: MOSFET N-CH 30V 26A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 13A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V
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