STS4DNFS30

STS4DNFS30 STMicroelectronics


en.CD00125433.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 4.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 78 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.41 EUR
Mindestbestellmenge: 8
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Technische Details STS4DNFS30 STMicroelectronics

Description: MOSFET N-CH 30V 4.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V.

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STS4DNFS30 en.CD00125433.pdf
auf Bestellung 4436 Stücke:
Lieferzeit 21-28 Tag (e)
STS4DNFS30 STS4DNFS30 Hersteller : STMicroelectronics sts4dnfs30.pdf Trans MOSFET N-CH 30V 4.5A 8-Pin SO N T/R
Produkt ist nicht verfügbar
STS4DNFS30 STS4DNFS30 Hersteller : STMicroelectronics en.CD00125433.pdf Description: MOSFET N-CH 30V 4.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Produkt ist nicht verfügbar
STS4DNFS30 STS4DNFS30 Hersteller : STMicroelectronics stmicroelectronics_cd00125433-1205692-1275334.pdf MOSFET N Ch 30V 0.044 Ohm 4.5A
Produkt ist nicht verfügbar