STS4DNFS30

STS4DNFS30 STMicroelectronics


en.CD00125433.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 4.5A 8SO
Power Dissipation (Max): 2W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
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8+2.41 EUR
10+2 EUR
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Technische Details STS4DNFS30 STMicroelectronics

Description: MOSFET N-CH 30V 4.5A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2W (Tc), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

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STS4DNFS30 en.CD00125433.pdf
auf Bestellung 4436 Stücke:
Lieferzeit 21-28 Tag (e)
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STS4DNFS30 STS4DNFS30 Hersteller : STMicroelectronics en.CD00125433.pdf Description: MOSFET N-CH 30V 4.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Tc)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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STS4DNFS30 STS4DNFS30 Hersteller : STMicroelectronics stmicroelectronics_cd00125433-1205692-1275334.pdf MOSFET N Ch 30V 0.044 Ohm 4.5A
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