Technische Details STS7NF60L STMicroelectronics
Description: STMICROELECTRONICS - STS7NF60L - Leistungs-MOSFET, n-Kanal, 60 V, 7.5 A, 0.017 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 7.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1V, euEccn: NLR, Verlustleistung: 2.5W, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.017ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote STS7NF60L nach Preis ab 0.9 EUR bis 4.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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STS7NF60L | STMicroelectronics |
 Trans MOSFET N-CH 60V 7.5A 8-Pin SO N T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STS7NF60L | STMicroelectronics |
Trans MOSFET N-CH 60V 7.5A 8-Pin SO N T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STS7NF60L | STMicroelectronics |
Trans MOSFET N-CH 60V 7.5A 8-Pin SO N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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STS7NF60L | STMicroelectronics |
Description: MOSFET N-CH 60V 7.5A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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STS7NF60L | STMicroelectronics |
Description: MOSFET N-CH 60V 7.5A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 6347 Stücke: Lieferzeit 10-14 Tag (e) |
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STS7NF60L | STMicroelectronics |
MOSFETs N-Ch 60 V 0.017 Ohm 7.5 A STripFET II |
auf Bestellung 8899 Stücke: Lieferzeit 10-14 Tag (e) |
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STS7NF60L | STMICROELECTRONICS |
Description: STMICROELECTRONICS - STS7NF60L - Leistungs-MOSFET, n-Kanal, 60 V, 7.5 A, 0.017 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 7.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 2.5W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.017ohm SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3625 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STS7NF60L |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 7.5A 8-Pin SO N T/R
Trans MOSFET N-CH 60V 7.5A 8-Pin SO N T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.9 EUR |
| STS7NF60L |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 7.5A 8-Pin SO N T/R
Trans MOSFET N-CH 60V 7.5A 8-Pin SO N T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.9 EUR |
| STS7NF60L |
|
Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 7.5A 8-Pin SO N T/R
Trans MOSFET N-CH 60V 7.5A 8-Pin SO N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.94 EUR |
| STS7NF60L |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 7.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 7.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.44 EUR |
| 5000+ | 1.42 EUR |
| STS7NF60L |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 7.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 7.5A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 6347 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.63 EUR |
| 10+ | 3.12 EUR |
| 100+ | 2.14 EUR |
| 500+ | 1.73 EUR |
| STS7NF60L |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 60 V 0.017 Ohm 7.5 A STripFET II
MOSFETs N-Ch 60 V 0.017 Ohm 7.5 A STripFET II
auf Bestellung 8899 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.88 EUR |
| 10+ | 3.37 EUR |
| 100+ | 2.37 EUR |
| 500+ | 1.92 EUR |
| 1000+ | 1.77 EUR |
| 2500+ | 1.69 EUR |
| STS7NF60L |
|
Hersteller: STMICROELECTRONICS
Description: STMICROELECTRONICS - STS7NF60L - Leistungs-MOSFET, n-Kanal, 60 V, 7.5 A, 0.017 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.017ohm
SVHC: No SVHC (25-Jun-2025)
Description: STMICROELECTRONICS - STS7NF60L - Leistungs-MOSFET, n-Kanal, 60 V, 7.5 A, 0.017 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.017ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 3625 Stücke:
Lieferzeit 14-21 Tag (e)