STS8C5H30L

STS8C5H30L STMicroelectronics


cd00043376-1796013.pdf Hersteller: STMicroelectronics
MOSFET N/P-Ch 30V 8/5 Amp
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Technische Details STS8C5H30L STMicroelectronics

Description: MOSFET N/P-CH 30V 8A/5.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A, Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V, Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC.

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STS8C5H30L N/P-MOSFET
Produktcode: 168551
Transistoren > MOSFET N-CH
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STS8C5H30L Hersteller : STMicroelectronics 207cd00043376.pdf Trans MOSFET N/P-CH 30V 8A/5.4A 8-Pin SO N T/R
Produkt ist nicht verfügbar
STS8C5H30L STS8C5H30L Hersteller : STMicroelectronics Description: MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
STS8C5H30L STS8C5H30L Hersteller : STMicroelectronics Description: MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar