Technische Details STS8C5H30L STMicroelectronics
Description: MOSFET N/P-CH 30V 8A/5.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A, Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V, Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote STS8C5H30L nach Preis ab 1.4 EUR bis 1.4 EUR
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| STS8C5H30L | Hersteller : VBsemi |
Transistor N/P-MOSFET; 30V; 16V; 25mOhm/75mOhm; 8A/5,4A; 2W; -55°C ~ 150°C; STS8C5H30L-VB; STS8C5H30L TSTS8C5H30L Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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STS8C5H30L N/P-MOSFET Produktcode: 168551
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Transistoren > MOSFET N-CH |
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| STS8C5H30L | Hersteller : STMicroelectronics |
 Trans MOSFET N/P-CH 30V 8A/5.4A 8-Pin SO N T/R |
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STS8C5H30L | Hersteller : STMicroelectronics |
Description: MOSFET N/P-CH 30V 8A/5.4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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STS8C5H30L | Hersteller : STMicroelectronics |
Description: MOSFET N/P-CH 30V 8A/5.4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A, 5.4A Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |