STSJ100NHS3LL

Description: MOSFET N-CH 30V 100A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC-EP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 3W (Ta), 70W (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tape & Reel (TR).